2N7002K vishay siliconix new product document number: 71333 s-02464?rev. a, 25-oct-00 www.vishay.com 1 n-channel 60-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (ma) 60 2 @ v gs = 10 v 300
low on-resistance: 2 low threshold: 2 v (typ) low input capacitance: 25 pf fast switching speed: 25 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. battery operated systems solid-state relays 2n7002 (7k)* *marking code to-236 sot-23 1 2 3 top view g s d
parameter symbol limit unit drain-source voltage v ds 60 gate-source voltage v gs 20 v t a = 25 c 300 continuous drain current (t j = 150 c) b t a = 100 c i d 190 ma pulsed drain current a i dm 800 t a = 25 c 0.35 power dissipation b t a = 100 c p d 0.14 w maximum junction-to-ambient b r thja 350 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board.
2N7002K vishay siliconix new product www.vishay.com 2 document number: 71333 s-02464 ? rev. a, 25-oct-00
limits parameter symbol test conditions min typ b max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 60 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2.5 v v ds = 0 v, v gs = 20 v 10 a v ds = 0 v, v gs = 10 v 150 gate-body leakage i gss v ds = 0 v, v gs = 10 v, t j = 85 c 1000 v ds = 0 v, v gs = 5 v 100 na v ds = 50 v, v gs = 0 v 10 v ds = 50 v, v gs = 0 v, t j = 85 c 100 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 v ds = 60 v, v gs = 0 v, t j = 125 c 500 a v gs = 10 v, v ds = 7.5 v 800 on-state drain current c i d(on) v gs = 4.5 v, v ds = 10 v 500 ma v gs = 10 v, i d = 500 ma 2 drain-source on-resistance c r ds(on) v gs = 4.5 v, i d = 200 ma 4 forward transconductance c g fs v ds = 10 v, i d = 200 ma 100 ms diode forward voltage v sd i s = 200 ma, v gs = 0 v 1.3 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v i d 250 ma 0.4 0.6 nc input capacitance c iss 30 output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz 6 pf reverse transfer capacitance c rss 2.5 switching b, d turn-on time t (on) v dd = 30 v, r l = 150 25 turn-off time t (off) i d 200 ma, v gen = 10v r g = 10 35 ns notes a. t a = 25 c unless otherwise noted. tnjo60be b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
2N7002K vishay siliconix new product document number: 71333 s-02464 ? rev. a, 25-oct-00 www.vishay.com 3 0 300 600 900 1200 0123456 0.0 0.2 0.4 0.6 0.8 1.0 012345 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs = 10 v 3 v 5 v 4 v v gs ? gate-to-source voltage (v) ? drain current (ma) i d t j = ? 55 c 125 c 25 c 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 10 v @ 500 ma v gs = 4.5 v @ 200 ma (normalized) ? on-resistance ( r ds(on) ) 0 1 2 3 4 5 6 7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v ds = 10 v i d = 250 ma gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 on-resistance vs. drain current i d ? drain current (ma) v gs = 4.5 v v gs = 10 v ? on-resistance ( r ds(on) ) 0 8 16 24 32 40 0 5 10 15 20 25 capacitance v ds ? drain-to-source voltage (v) c ? capacitance (pf) c rss c oss c iss v gs = 0 v 6 v 7 v
2N7002K vishay siliconix new product www.vishay.com 4 document number: 71333 s-02464 ? rev. a, 25-oct-00 0 1 2 3 4 5 0246810 on-resistance vs. gate-source voltage v gs ? gate-to-source voltage (v) i d = 500 ma i d = 200 ma ? on-resistance ( r ds(on) ) 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 t j = 25 c t j = 125 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s 10 t j = ? 55 c v gs = 0 v 0.01 0 1 2.5 3 100 600 0.1 power (w) single pulse power, junction-to-ambient time (sec) threshold voltage variance over temperature variance (v) v gs(th) ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a t j ? junction temperature ( c) 1.5 2 0.5 1 10 t a = 25 c 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =350 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
2N7002K vishay siliconix new product document number: 71333 s-02464 ? rev. a, 25-oct-00 www.vishay.com 5 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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